Thermal optimization of defected Cu2O photon-absorbing layer and the steady p-Cu2O/n-Si photovoltaic application

Cuprous oxide (Cu2O), a far-reaching photon-absorption layer, is active in the field of solar cells and sensors. In this work, Cu2O films prepared at low temperature by radio frequency (RF) magnetron sputtering holds branch-like crystalline morphology, optical transmittance unsatisfactory carrier mobility. However, peroxidation will occur when thermal excessive. By optimizing, (111)-oriented monocrystal with trapping light structure are obtained through rapid annealing (RTA) process N2 atmosphere, mobility escalated five times to 11.75 cm2/v·s. On basis, we construct an Au/p-Cu2O/n-Si/Al device keep leakage current standing 1.81 × 10?9 A rectification ratio (IF/IR) reaching 177. Surprisingly, unpackaged still maintains 44 considerable even operating 120 °C. Finally, have measured photovoltaic characteristic provided some optimization strategies for power conversion efficiency.